FMM22L16-55-TG Ferroelectric RAM Memory IC

The FMM22L16-55-TG from Cypress is a 4-Mbit non-volatile Ferroelectric RAM (F-RAM). Organized as 256K x 16, this device features a high-speed parallel interface and operates from a single 2.7V to 3.6V supply. With a fast 55 ns access time and an industrial temperature range of -40°C to +85°C, it is engineered for applications requiring frequent and fast writes with high endurance. Housed in a compact TSOP-44 package, it is ideal for data logging, industrial control systems, and medical devices where reliable, non-volatile storage is critical.

Features

• High-Density Non-Volatile Storage: 4 Mbit capacity organized as 256K x 16, providing ample memory for complex data logging and system parameter storage.
• Fast Parallel Interface: Supports a 55 ns access time, enabling rapid data read and write operations for real-time processing applications.
• Wide Voltage Operation: Operates from 2.7 V to 3.6 V, ensuring compatibility with standard 3.3V system power supplies and offering design flexibility.
• High Reliability: F-RAM technology offers virtually unlimited read/write endurance, far exceeding traditional non-volatile memories like EEPROM or Flash.
• Industrial Temperature Range: Rated for -40°C to +85°C, making it suitable for harsh environmental conditions in automotive, industrial, and medical fields.